姓    名

惠飞

职    称

副研究员

研究方向

二维材料及新型微纳电子信息器件

邮    箱

feihui@zzu.edu.cn

教育和科研工作经历：

2022.03 - 至今，郑州大学，直聘研究员

2018.10 - 2021.09，以色列理工学院，材料科学与工程，博士后

2015.02 - 2018.09，巴塞罗那大学，纳米科学，博士

2017.05 - 2017.10，剑桥大学，电子工程，访问学生

2016.04 - 2017.03，麻省理工学院，计算机科学与工程，访问学生

2013.08 - 2018.06，苏州大学，化学，博士

研究介绍：

围绕后摩尔时代二维（2D）材料和纳米电子信息器件的开发和集成问题，开展2D材料的大面积制备、信息存储及神经形态器件的制备和应用等方面的研究。研究成果发表在Nature Electronics、Advanced Materials等国际学术期刊，共发表SCI论文50余篇，总引用次数>5100次；参与撰写英文学术专著2部（Wiley-VCH）；获授权中国发明专利2项（其中一项作为第一发明人获得北京协同创新中心项目一期投资560万元）；主持国家重大研究计划培育项目等纵向项目5项、企业横向项目2项。担任多届半导体领域国际学术会议（IEEE IPFA、IEEE EDTM、IEEE IRPS）的技术委员等。

荣誉与奖励：

2022年度爱思唯尔微电子工程青年研究员奖

2021年度国家优秀自费留学生奖学金

2020年度韩国Park Systems AFM学术成果奖

2017年英国皇家化学会学术交流奖

Microelectronic Engineering期刊副主编/编委

InfoMat，FlexMat期刊青年编委

代表性论著：（限10项内）

1. Fei Hui*, Conghui Zhang, Huanhuan Yu, Tingting Han, Jonas Weber, Yaqing Shen, Yiping Xiao, Xiaohong Li, Zhijun Zhang, Peisong Liu*. “Self‐Assembly of Janus Graphene Oxide via Chemical Breakdown for Scalable High‐Performance Memristors”, Advanced Functional Materials 2024, 34, 2302073. (*通讯作者)

2. Peisong Liu^#, Fei Hui^#, Fernando Aguirre, Fernan Saiz, Lulu Tian, Tingting Han, Zhijun Zhang, Enrique Miranda, Mario Lanza*. “Nano-memristors with 4 mV switching voltage based on surface-modified copper nanoparticles”, Advanced Materials 2022, 2201197. (^#共同一作)

3. Fei Hui*, Peisong Liu, Tian Carey, Elad, Koren, Andrea C. Ferrari, Mario Lanza*. “In situ observation of low power nano-synaptic response in graphene oxide using conductive atomic force miscroscopy”, Small 2021, 17, 2101100.

4. Fei Hui, Chao Wen, Shaochuan Chen, Elad Koren, Rimma Dechter, David Lewis, and Mario Lanza, “Emerging scanning probe-based setups for advanced nanoelectronic research”, Advanced Functional Materials 2019, 1902776.

5. Fei Hui, Mario Lanza, “Scanning probe microscopy for advanced nanoelectronics”, Nature Electronics 2019, 2, 221.

6. Fei Hui, Marco A. Villena, Wenjing Fang, Ang-Yu Lu, Jing Kong, Yuanyuan Shi, Xu Jing, Kaichen Zhu, Mario Lanza*. “Synthesis of large-area multilayer hexagonal boron nitride sheets on iron substrates and its use in resistive switching devices”, 2D Materials 2018, 5, 031011.

7. Fei Hui, Wenjing Fang, Wei Sun Leong, Tewa Kpulun, Haozhe Wang, Marco A Villena, Gary Harris, Jing Kong, Mario Lanza*. “Electrical homogeneity of large-area chemical vapor deposited multilayer hexagonal boron nitride sheets”, ACS Applied Materials & Interfaces 2017, 9, 39895.

8. Lanlan Jiang^#, Yuanyuan Shi^#, Fei Hui^#, Kechao Tang, Qian Wu, Chengbin Pan, Xu Jing, Hasan Uppal, Felix Palumbo, Guangyuan Lu, Tianru Wu, Haomin Wang, Marco A Villena, Xiaoming Xie, Paul C Mclntyre, Mario Lanza*. “Dielectric breakdown in chemical vapor deposited hexagonal boron nitride”, ACS Applied Materials & Interfaces 2017, 9, 39758.

9. Fei Hui, Enric Grustan-Gutierrez, Qi Liu, Shibing Long, Anna. L. Ott, Andrea C. Ferrari, Mario Lanza. “Graphene and related materials for resistive random access memories”. Advanced Electronic Materials 2017, 3, 1600195. - Highlighted as front cover.

10. Fei Hui, Pujashree Vajha, Yuanyuan Shi, Yanfeng Ji, Huiling Duan, Andrea Padovani, Luca Larcher, Xiao-Rong Li, Jing-Juan Xu, Mario Lanza, “Moving graphene devices from lab to market: advanced graphene-coated nanoprobes”, Nanoscale 2016, 8, 8466.