个人简介


姓   名：吴翟


性   别：男


所属部门：材料物理


职 称：教授


学 历：博士


所学专业：材料物理与化学


电子邮件：wudi1205@zzu.edu.cn


研究方向：纳米半导体光电材料与器件



●工作经历


（1）2014.12-至今 郑州大学 物理学院 教授


（2）2014.2-2015.5 香港大学 化学系 博士后


（3）2013.6-2014.1 合肥京东方光电科技有限责任公司 高级工程师

  

●学术成果：


   近年来一直在从事低维纳米半导体光电材料与器件的研究，发表SCI论文220余篇，其中包含“ESI高被引论文”20篇，引用超12000余次，“H因子”为60；申请发明专利18项。先后主持了国家自然科学基金-面上项目、国家自然科学基金-河南联合基金,国家自然科学基-金青年项目，河南省自然科学基金优秀青年项目,中国博士后科学基金项目，河南省科技厅重点研发与推广专项和河南省高等学校重点科研项目等科研项目十余项，荣获河南省高层次人才特殊支持“中原青年拔尖人才”、河南省教育厅学术技术带头人、纳米研究青年科学家奖等荣誉和称号。目前兼任Nano Research、Materials Futures青年编委，担任Nature Communications、Advanced Materials、Nano letters等40余种期刊审稿专家。

 

科研方向


●科研方向


  主要从事低维半导体纳米结构的制备、表征及应用研究，以及相应新型微纳器件的设计、制备、性能的研究工作，探索纳米材料在新型电子、光电子器件的应用，包括：新型二维纳米半导体材料及其光电器件：新型二维材料的大面积制备，探索其在高性能紫外和红外光电探测与成像中的应用。

 

科研项目、获奖等情况


● 科研项目


(1) 主持：国家自然科学基金-河南联合基金，50万元(2021.01-2023.12)

(2) 主持：河南省高层次人才特殊支持“中原青年拔尖人才”项目，50万元（2022.01-2024.12）

(3) 主持：河南省自然科学基金-优秀青年项目，25万元(2020.01-2022.12)

(4) 主持：郑州大学物理学科推进计划，60万元 (2019.01-2021.12)

(5) 主持：郑州大学青年教师基础研究培育基金，20万元（2020.8-2021.12）

(6) 主持：国家自然科学基金-青年项目，19万元 (2017.01-2019.12)

(7) 主持：中国博士后科学基金，5万元 (面上项目；2015.09-2017.06)

(8) 主持：河南省科技厅重点研发与推广专项 (2018.01-2020.12)

(9) 主持：河南省高等学校重点科研项目，5万元 (2017.01-2018.12)

(10) 主持：汉威科技集团股份有限公司横向项目，100万元（2022.03-2023.12）

(11) 主持：国家自然科学基金-面上项目，55万元(2024.01-2027.12)


●个人荣誉


(1) 2023年，河南省高校青年骨干教师

(2) 2022年，纳米研究顶级论文奖Nano Research “Top Papers Award”

(3) 2021年，河南省教育厅科技论文一等奖，第一

(4) 2021年，河南省教育厅科技成果一等奖，2/5

(5) 2021年，纳米研究顶级论文奖 Nano Research “Top Papers Award”

(6) 2021年，河南省高层次人才特殊支持“中原青年拔尖人才”

(7) 2021年，纳米研究青年科学家奖The Nano Research Young Innovators (NR45) Awards

(8) 2020年，河南省教育厅学术技术带头人

(9) 2019年，郑州大学“三育人”先进个人

(10) 2018年，郑州大学首批“青年拔尖人才”

(11) 2017-2019年，河南省优秀硕士论文指导教师

(12) 2019年，AIP Best Speaker Award

(13) 2020年，China Top Cited Paper Award

(14) 2018年，郑州大学青年骨干教师

 

科研成果

●发表学术论文(*为通讯作者)


  1. D. Wu, C. Guo, L. Zeng*, X. Ren, Z. Shi, L. Wen, Q. Chen, M. Zhang, X. J. Li*, C.-X. Shan, J. Jie*, Phase-controlled van der Waals growth of wafer-scale 2D MoTe2layers for integrated high-sensitivity broadband infrared photodetection, Light: Sci. Appl., 2023, 12(1): 5.

  2. D. Wu, R. Tian, P. Lin*, Z. Shi, X. Chen, M. Jia, Y. Tian, X. Li, L. Zeng*, J. Jie, Wafer-scale synthesis of wide bandgap 2D GeSe2layers for self-powered ultrasensitive UV photodetection and imaging, Nano Energy, 2022, 104, 107972.

  3. L. Zeng, W. Han, S.-E. Wu, D. Wu*, S. P. Lau, Y. H. Tsang, Graphene/PtSe2/Pyramid Si Van Der Waals Schottky Junction for Room-Temperature Broadband Infrared Light Detection, IEEE Trans. Electron Devices, 2022, 69(11): 6212.

  4. D. Wu, M. Xu, L. Zeng, Z. Shi, Y. Tian, X. J. Li, C. X. Shan, J. Jie, In Situ Fabrication of PdSe2/GaN Schottky Junction for Polarization-Sensitive Ultraviolet Photodetection with High Dichroic Ratio, ACS Nano, 2022, 16(4): 5545-5555.

  5. D. Wu, J. Guo, C. Wang, X. Ren, Y. Chen, P. Lin, L. Zeng*, Z. Shi, X. J. Li*, C. X. Shan and J. Jie*, Ultrabroadband and High-Detectivity Photodetector Based on WS2/Ge Heterojunction through Defect Engineering and Interface Passivation. ACS Nano 2021, 15 (6), 10119-10129. (IF=15.881)

  6. D. Wu, Z. Zhao, W. Lu, L. Rogée, L. Zeng, P. Lin, Z. Shi, Y. Tian, X. Li, Y. H. Tsang, Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed, Nano Research. 2021, 14, 1973-1979. (IF=8.897)

  7. D. Wu, C. Guo, Z. Wang, X. Ren, Y. Tian, Z. Shi, P. Lin, Y. Tian, Y. Chen and X. Li, A defect-induced broadband photodetector based on WS2/pyramid Si 2D/3D mixed-dimensional heterojunction with a light confinement effect. Nanoscale 2021, 13 (31), 13550-13557. (IF=7.79)

  8. D. Wu, Z. Mo, Y. Han, P. Lin, Z. Shi, X. Chen, Y. Tian, X. J. Li, H. Yuan, Y. H. Tsang, Fabrication of 2D PdSe2/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection. ACS Appl. Mater. Interfaces 2021, 13 (35), 41791-41801. (IF=9.229)

  9. Di Wu, Cheng Jia, Fenghua Shi, Longhui Zeng,* Pei Lin, Lin Dong, Zhifeng Shi, Yongtao Tian, Xinjian Li, and Jiansheng Jie*, Mixed-dimensional PdSe2/SiNWA heterostructure based photovoltaic detectors for self-driven, broadband photodetection, infrared imaging and humidity sensing, J. Mater. Chem. A, 2020, 8, 3632-3642. (IF=12.7)

  10. Z. Wang, X. Zhang, D. Wu*, J. Guo, Z. Zhao, Z. Shi, Y. Tian, X. Huang* and X. Li, Construction of mixed-dimensional WS2/Si heterojunctions for high-performance infrared photodetection and imaging applications, J. Mater. Chem.C, 2020, 8(20): 6877-6882.(IF=7.393)

  11. C. Jia, X. Huang, D. Wu*, Y. Tian, J. Guo, Z. Zhao, Z. Shi, Y. Tian, J. Jie and X. Li, An ultrasensitive self-driven broadband photodetector based on a 2D-WS2/GaAs type-II Zener heterojunction, Nanoscale, 2020, 12 (7): 4435-4444. (IF=7.79)

  12. D. Wu, J. Guo, J. Du, C. Xia, L. Zeng, Y. Tian, Z. Shi, Y. Tian, X. J. Li, Y. H. Tsang and J. Jie, Highly Polarization-Sensitive, Broadband, Self-Powered Photodetector Based on Graphene/PdSe2/Germanium Heterojunction, ACS Nano, 2019. (IF=15.881)

  13. C. Jia, D. Wu*, E. Wu, J. Guo, Z. Zhao, Z. Shi, T. Xu, X. Huang, Y. Tian and X. Li, A self-powered high-performance photodetector based on a MoS2/ GaAs heterojunction with high polarization sensitivity, J. Mater. Chem. C, 2019, 7: 3817-3821. (IF=7.393)

  14. R. Zhuo, L. Zeng, H. Yuan, D. Wu*, Y. Wang, Z. Shi, T. Xu, Y. Tian, X. Li and Y. H. Tsang, In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity, Nano Research, 2019, 12, 183-189. (IF=8.897)

  15. Wu, E.; Wu, D.*; Jia, C.; Wang, Y.; Yuan, H.; Zeng, L.; Xu, T.; Shi, Z.; Tian, Y.; Li, X. In Situ Fabrication of 2D WS2/Si Type-II Heterojunction for Self-Powered Broadband Photodetector with Response up to Mid-Infrared. ACS Photonics, 2019, 2019, 6: 565-572. (IF=7.5293)

  16. Zeng, L.-H.; Wu, D.; Lin, S.-H.; Xie, C.; Yuan, H.-Y.; Lu, W.; Lau, S. P.; Chai, Y.; Luo, L.-B.; Li, Z.-J.; Tsang, Y. H. Controlled Synthesis of 2D Palladium Diselenide for Sensitive Photodetector Applications. Adv. Funct. Mater. 2019, 29, 1806878. (IF=18.808)

  17. D. Wu, Y. Wang, L. Zeng, C. Jia, E. Wu, T. Xu, Z. Shi, Y. Tian, X. Li and Y. H. Tsang, Design of 2D layered PtSe2 heterojunction for the high-performance room-temperature broadband infrared photodetector. ACS Photonics, 2018, 5, 3820-3827. (IF=7.529)

  18. Yuange Wang, Xiaowen Huang, Di Wu*, Ranran Zhuo, Enping Wu, Cheng Jia, Zhifeng Shi, Tingting Xu, Yongtao Tian and Xinjian Li, A room-temperature near-infrared photodetector based on a MoS2/CdTe p-n heterojunction with a broadband response up to 1700 nm, J. Mater. Chem. C, 2018, 6, 4861-4865. (IF=7.393)

  19. L. Z. Lei, Z. F. Shi, Y. Li, Z. Z. Ma, F. Zhang, T. T. Xu, Y. T. Tian, D. Wu*, X. J. Li and G. T. Du, High-efficiency and air-stable photodetectors based on lead-free double perovskite Cs2AgBiBr6 thin films, J. Mater. Chem. C, 2018, 6: 7982-7988. (IF=7.393)

  20. L. Zeng, S. Lin, Z. Lou, H. Yuan, H. Long, Y. Li, W. Lu, S. P. Lau, D. Wu* and Y. H. Tsang*, Ultrafast and Sensitive Photodetector Based on PtSe2/Silicon Nanowire Array Heterojunction with Multiband Spectral Response from 200 to 1550 nm, NPG Asia Materials, 2018, 10, 352-362. (IF=10.481)

  21. D. Wu, Z. Lou, Y. Wang, Z. Yao, T. Xu, Z. Shi, J. Xu, Y. Tian, X. Li* and Y. H. Tsang*, Photovoltaic high-performance broadband photodetector based on MoS2/Si nanowire array heterojunction, Solar Energy Materials and Solar Cells, 2018, 182: 272-280. (7.267)

  22. R. Zhuo, Y. Wang, D. Wu*, Z. Lou, Z. Shi, T. Xu, J. Xu, Y. Tian and X. Li*, High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction, J. Mater. Chem. C, 2018, 6: 299-303. (IF=7.393)

  23. T. Xu, Y. Liu, Y. Pei, Y. Chen, Z. Jiang, Z. Shi, J. Xu, D. Wu*, Y. Tian and X. Li, The ultra-high NO2 response of ultra-thin WS2 nanosheets synthesized by hydrothermal and calcination processes, Sensors and Actuators B: Chemical, 2018, 259: 789-796. (IF=7.46)

  24. D. Wu, Z. Lou, Y. Wang, T. Xu*, Z. Shi, J. Xu, Y. Tian and X. Li*, Construction of MoS2/Si nanowire array heterojunction for ultrahigh-sensitivity gas sensor, Nanotechnology, 2017, 28: 435503.

  25. Z. Lou, L. Zeng, Y. Wang, D. Wu*, T. Xu, Z. Shi, Y. Tian, X. Li and Y. H. Tsang*, High-performance MoS2/Si heterojunction broadband photodetectors from deep ultraviolet to near infrared, Optics Letters, 2017, 42: 3335.

  26. Z. Lou, D. Wu*, K. Bu, T. Xu, Z. Shi, J. Xu, Y. Tian and X. Li, Dual-mode high-sensitivity humidity sensor based on MoS2/Si nanowires array heterojunction, Journal of Alloys and Compounds, 2017, 726: 632-637.

  27. D. Wu*, T. T. Xu, Z. F. Shi, Y. T. Tian, X. J. Li, Y. Q. Yu and Y. Jiang, Two-terminal nonvolatile resistive switching memory devices based on n-CdSe NR/p-Si heterojunctions, Journal of Alloys and Compounds, 2017, 695: 1653-1657.

  28. D. Wu*, Y. Chang, Z. Lou, T. Xu, J. Xu, Z. Shi, Y. Tian and X. Li, Controllable synthesis of ternary ZnSxSe1-x nanowires with tunable band-gaps for optoelectronic applications, Journal of Alloys and Compounds, 2017, 708: 623-627.

  29. Y. Chang, D. Wu*, T. Xu, Z. Shi, Y. Tian and X. Li, Fabrication of p-type ZnTe NW/In Schottky diodes for high-speed photodetectors, Journal of Materials Science-Materials in Electronics, 2017, 28: 1720-1725.

  30. D. Wu*, T. Xu, Z. Shi, Y. Tian and X. Li, Construction of ZnTe nanowires/Si p–n heterojunctions for electronic and optoelectronic applications, Journal of Alloys and Compounds, 2016, 661: 231-236.

  31. D. Wu*, Z. Shi, T. Xu, Y. Tian and X. Li, Gate-controllable photoresponse of nitrogen-doped p-type ZnSe nanoribbons top-gate FETs, Materials Letters, 2016, 164: 84-88.

  32. V.K. Au#, D. Wu#, V.W. Yam, Organic Memory Devices Based on a Bis-Cyclometalated Alkynylgold(III) Complex, J. Am. Chem. Soc. 137 (2015) 4654-4657.

  33. C.T. Poon, D. Wu, W.H. Lam, V.W. Yam, Solution-Processable Donor-Acceptor Compound Containing Boron(III) Centers for Small-Molecule-Based High-Performance Ternary Electronic Memory Devices, Angew. Chem. Int. Ed. 54 (2015) 10569-10573.

  34. D. Wu, Y. Jiang, X. Yao, Y. Chang, Y. Zhang, Y. Yu, Z. Zhu, Y. Zhang, X. Lan, H. Zhong, Construction of crossed heterojunctions from p-ZnTe and n-CdSe nanoribbons and their photoresponse properties, J. Mater. Chem. C 2 (2014) 6547-6553.

  35. D. Wu, Y. Jiang, Y. Yu, Y. Zhang, G. Li, Z. Zhu, C. Wu, L. Wang, L. Luo, J. Jie, Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires, Nanotechnology 23 (2012) 485203.

  36. D. Wu, Y. Jiang, Y.G. Zhang, J.W. Li, Y.Q. Yu, Y.P. Zhang, Z.F. Zhu, L. Wang, C.Y. Wu, L.B. Luo, J.S. Jie, Device structure-dependent field-effect and photoresponse performances of p-type ZnTe:Sb nanoribbons, J. Mater. Chem. 22 (2012) 6206-6212.

  37. D. Wu, Y. Jiang, Y.G. Zhang, Y.Q. Yu, Z.F. Zhu, X.Z. Lan, F.Z. Li, C.Y. Wu, L. Wang, L.B. Luo, Self-powered and fast-speed photodetectors based on CdS:Ga nanoribbon/Au Schottky diodes, J. Mater. Chem. 22 (2012) 23272-23276.

  38. D. Wu, Y. Jiang, S.Y. Li, F.Z. Li, J.W. Li, X.Z. Lan, Y.G. Zhang, C.Y. Wu, L.B. Luo, J.S. Jie, Construction of high-quality CdS:Ga nanoribbon/silicon heterojunctions and their nano-optoelectronic applications, Nanotechnology 22 (2011) 405201-405206.

  39. D. Wu, Y. Jiang, L. Wang, S.Y. Li, B. Wu, X.Z. Lan, Y.Q. Yu, C.Y. Wu, Z.B. Wang, J.S. Jie, High-performance CdS:P nanoribbon field-effect transistors constructed with high-kappa dielectric and top-gate geometry, Appl. Phys. Lett. 96 (2010) 123118-123120.


 

●发明专利

  1. 一种二维二硒化钯纳米薄膜在宽波段偏振光信号检测中的应用，CN201910247192.9

  2. 基于二维二硒化铂纳米薄膜与碲化镉晶体的异质结型近红外光电探测器及其制备方法，CN201811336880.4

  3. 基于二维二硒化钯纳米薄膜与锗的自驱动异质结型红外光电探测器及其制备方法，ZL201811336879.1

  4. 基于二维二硫化钼纳米薄膜与碲化镉晶体的II型异质结型近红外光电探测器及其制备方法，CN201811336892.7

  5. 一种双模湿度传感器及其制备方法，ZL201710375959.7

  6. 一种异质结型光电探测器及其制备方法，ZL201210081208.1

  7. 基于硒化镉纳米线肖特基结型多字节非挥发性存储器及其制备方法，CN201210077102.4

  8. Solution-processable donor-acceptor compounds containing boron (iii) moieties for the fabrication of optical reflectors and organic memory devices and their preparation thereof，US20160343943 A1（美国专利）

  9. 以Ni(Mg)O作为空穴提供层的钙钛矿绿光LED及制备方法 CN201610219503.7

  10. 以ZnO纳米墙网络作为电子注入层的钙钛矿LED及制备方法 CN201610220011.X

  11. 一种阵列基板及其制备方法和显示装置 CN201310705330.6

  12. 基于环氧树脂拉膜分散纳米线的方法 CN201010143683.8

  13. 一种感温发光变色荧光材料及其制备方法 CN201110202844.0

  14. 一种感温发光变色荧光材料的用途 CN201110202901.5